Pay in 4 interest-free payments of $62.50 Learn more
Ships within 48 hours · Estimated delivery Jul 31 - Aug 5
On-State Resistance (RDS(on)): 13mΩ max
4 (limited support)
1") standard pitch
Max Storage & Operating temperature Should Be: -65 to +150 Centigrade
IRFP4668 MOSFET gy271 On-State Resistance (RDS(on)): 13mΩ maxIRFP4668 MOSFET Specifications: Type Designator: IRFP4668 Type of Transistor: MOSFET Type of Control Channel: N Channel Maximum Power Dissipation (Pd): 520 W Maximum Drain Source Voltage Vds : 200 V Maximum Gate Source Voltage Vgs : 30 V Maximum Gate Threshold Voltage Vgs(th) : 5 V Maximum Drain Current Id : 130 A Maximum Junction Temperature (Tj): 175 C Total Gate Charge (Qg): 161 nC Rise Time (tr): 105 nS Drain Source Capacitance (Cd): 810 pF
